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Q65110A1209 데이터시트(PDF) 3 Page - OSRAM GmbH

부품명 Q65110A1209
부품 상세설명  Silizium-PIN-Fotodiode in SMT und als Reverse Gullwing
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BPW34, BPW34S, BPW34SR
2007-05-23
3
Kurzschlussstrom,
E
v = 1000 Ix
Short-circuit current
I
SC
80
µA
Anstiegs- und Abfallzeit des Fotostromes
Rise and fall time of the photocurrent
R
L = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA
t
r, tf
20
ns
Durchlassspannung,
I
F = 100 mA, E = 0
Forward voltage
V
F
1.3
V
Kapazität,
V
R = 0 V, f = 1 MHz, E = 0
Capacitance
C
0
72
pF
Temperaturkoeffizient von
V
O
Temperature coefficient of
V
O
TC
V
– 2.6
mV/K
Temperaturkoeffizient von
I
SC
Temperature coefficient of
I
SC
TC
I
0.18
%/K
Rauschäquivalente Strahlungsleistung
Noise equivalent power
V
R = 10 V, λ = 850 nm
NEP
4.1
× 10– 14
Nachweisgrenze,
V
R = 10 V, λ = 850 nm
Detection limit
D*
6.6
× 1012
Kennwerte (
T
A = 25 ° C, Normlicht A, T = 2856 K)
Characteristics (
T
A = 25 ° C, standard light A, T = 2856 K) (cont’d)
Bezeichnung
Parameter
Symbol
Symbol
Wert
Value
Einheit
Unit
W
Hz
------------
cm
Hz
×
W
---------------------------


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