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2SD1459 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SD1459 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 4 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1459 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ; IB=0 150 V VCEsat Collector-emitter saturation voltage IC=0.5A, IB=50mA 1.5 V VBEsat Base-emitter saturation voltage IC=0.5A, IB=50mA 1.2 V ICBO Collector cut-offcurrent VCB=120V;IE=0 10 µA IEBO Emitter cut-offcurrent VEB=5V;IC=0 10 µA hFE DC current gain IC=0.3A ; VCE=5V 70 200 fT Transition frequency IC=0.1A ; VCE=5V 8 MHz hFE classifications Q R 70-140 100-200 |
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