전자부품 데이터시트 검색엔진 |
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SI8519-C-GM 데이터시트(PDF) 6 Page - List of Unclassifed Manufacturers |
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SI8519-C-GM 데이터시트(HTML) 6 Page - List of Unclassifed Manufacturers |
6 / 37 page Si85xx 6 Preliminary Rev. 0.4 Table 3. Insulation and Safety-Related Specifications Parameter Symbol Test Condition Value Unit SOIC-20 Minimum Air Gap (Clearance) L(1O1) 7.6 min mm Minimum External Tracking (Creepage) L(1O2) 7.6 min mm Minimum Internal Gap (Internal Clearance) 0.2 mm Tracking Resistance (Comparative Tracking Index) CTI DIN IEC 60112/VDE 0303 Part 1 >175 V Resistance (Input-Output)1 RIO 1012 Capacitance (Input-Output)1 CIO f=1 MHz 1.4 pF Input Capacitance2 CI 4.0 pF Notes: 1. To determine resistance and capacitance, the Si85xx is converted into a 2-terminal device. Pins 1–10 are shorted together to form the first terminal and pins 11–20 are shorted together to form the second terminal. The parameters are then measured between these two terminals. 2. Measured from input pin to ground. Table 4. IEC 60664-1 (VDE 0884 Part 2) Ratings Parameter Test Conditions Specification SOIC-20 Basic Isolation Group Material Group IIIa Installation Classification Rated Mains Voltages < 150 VRMS I-IV Rated Mains Voltages < 300 VRMS I-IV Rated Mains Voltages < 400 VRMS I-IV Rated Mains Voltages < 600 VRMS I-IV Rated Mains Voltages < 1000 VRMS I-III |
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