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IRLL3303TRPBF 데이터시트(PDF) 1 Page - International Rectifier |
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IRLL3303TRPBF 데이터시트(HTML) 1 Page - International Rectifier |
1 / 9 page IRLL3303PbF HEXFET® Power MOSFET S D G VDSS = 30V RDS(on) = 0.031Ω ID = 4.6A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SOT-223 package is designed for surface-mount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pick- and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of 1.0W is possible in a typical surface mount application. 04/27/04 Description l Surface Mount l Dynamic dv/dt Rating l Logic-Level Gate Drive l Fast Switching l Ease of Paralleling l Advanced Process Technology l Ultra Low On-Resistance l Lead-Free SO T -2 2 3 * When mounted on FR-4 board using minimum recommended footprint. ** When mounted on 1 inch square copper board, for comparison with other SMD devices. Parameter Typ. Max. Units RθJA Junction-to-Amb. (PCB Mount, steady state)* 93 120 RθJA Junction-to-Amb. (PCB Mount, steady state)** 48 60 Thermal Resistance °C/W Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V** 6.5 ID @ TA = 25°C Continuous Drain Current, VGS @ 10V* 4.6 ID @ TA = 70°C Continuous Drain Current, VGS @ 10V* 3.7 IDM Pulsed Drain Current 37 PD @TA = 25°C Power Dissipation (PCB Mount)** 2.1 W PD @TA = 25°C Power Dissipation (PCB Mount)* 1.0 W Linear Derating Factor (PCB Mount)* 8.3 mW/°C VGS Gate-to-Source Voltage ± 16 V EAS Single Pulse Avalanche Energy 140 mJ IAR Avalanche Current 4.6 A EAR Repetitive Avalanche Energy 0.10 mJ dv/dt Peak Diode Recovery dv/dt 1.3 V/ns TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C Absolute Maximum Ratings A www.irf.com 1 PD- 95223 |
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