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FMG3A 데이터시트(PDF) 2 Page - Rohm |
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FMG3A 데이터시트(HTML) 2 Page - Rohm |
2 / 7 page www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. Data Sheet EMG3 / UMG3N / FMG3A lAbsolute maximum ratings (Ta = 25°C) <For Tr1 and Tr2 in common> Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation Junction temperature Range of storage temperature lElectrical characteristics (Ta = 25°C) <For Tr1 and Tr2 in common> *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. MHz - 250 - Transition frequency fT *1 VCE = 10V, IE = -5mA, f = 100MHz - 3.5 4.7 5.9 kW 100 250 600 m A - - 0.15 V - - 0.5 - - 0.5 m A 5 - - - - V V V Collector-emitter breakdown voltage BVCEO IC= 1mA 50 - 50 - Collector-base breakdown voltage BVCBO IC= 50mA Unit Min. Typ. Max. Parameter Symbol Conditions Tj 150 °C Tstg - 55 to +150 °C IC(MAX.)*1 100 mA EMG3 / UMG3N PD *2 150 (Total)*3 mW FMG3A 300 (Total)*4 mW VCEO 50 V VEBO 5 V Parameter Symbol Values Unit VCBO 50 V IE= 50mA Collector cut-off current ICBO VCB = 50V Emitter cut-off current IEBO VEB = 4V Emitter-base breakdown voltage BVEBO IC / IB= 5mA / 0.25mA DC current gain hFE VCE= 5V , IC= 1mA , Input resistance R1 - Collector-emitter saturation voltage VCE(sat) 2/6 2012.06 - Rev.B |
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