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2SD1277 데이터시트(PDF) 2 Page - Savantic, Inc. |
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2SD1277 데이터시트(HTML) 2 Page - Savantic, Inc. |
2 / 3 page SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1277 2SD1277A CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SD1277 60 V(BR)CEO Collector-emitter breakdown voltage 2SD1277A IC=30mA , IB=0 80 V VCEsat Collector-emitter saturation voltage IC=4A; IB=8mA 1.5 V VBEsat Base-emitter saturation voltage IC=4A ;IB=8mA 2 V 2SD1277 VCB=60V ;IE=0 ICBO Collector cut-off current 2SD1277A VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=7V; IC=0 2 mA hFE-1 DC current gain IC=8A ; VCE=3V 500 hFE-2 DC current gain IC=4A ; VCE=3V 2000 10000 fT Transition frequency IC=0.5A; VCE=10V;f=1MHz 20 MHz Switching times ton Turn-on time 0.5 µs tstg Storage time 4.0 µs tf Fall time IC=4A ;IB1=8mA IB2=-8mA;VCC=50V 1.0 µs hFE-2 Classifications Q R 2000-5000 4000-10000 |
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유사한 설명 - 2SD1277 |
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