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SSPR60N03 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSPR60N03 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
2 / 4 page Elektronische Bauelemente SSPR60N03 60A , 30V , RDS(ON) 6 mΩ Ω Ω Ω N-Channel Enhancement Mode Power MOSFET 20-May-2014 Rev.A Page 2 of 4 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Teat Conditions Static Drain-Source Breakdown Voltage BVDSS 30 - - V VGS=0, ID= 250uA Gate-Threshold Voltage VGS(th) 1 - 2.5 V VDS=VGS, ID=250uA Gate-Source Leakage Current IGSS - - ±100 nA VGS= ±20V - - 1 VDS=24V, VGS=0, TJ=25°C Drain-Source Leakage Current IDSS - - 5 uA VDS=24V, VGS=0, TJ=55°C - - 6 VGS=10V, ID=30A Static Drain-Source On-Resistance 2 RDS(ON) - - 8 m VGS=4.5V, ID=15A Gate Resistance Rg - 1.6 2.8 f =1.0MHz Total Gate Charge(10V) Qg - 20 - Gate-Source Charge Qgs - 7.6 - Gate-Drain Change Qgd - 7.2 - nC ID=15A VDS=15V VGS=4.5V Turn-on Delay Time 2 Td(on) - 7.8 - Rise Time Tr - 15 - Turn-off Delay Time Td(off) - 37.3 - Fall Time Tf - 10.6 - nS VDD=15V ID=15A VGS=10V RG=3.3 Input Capacitance Ciss - 2295 - Output Capacitance Coss - 267 - Reverse Transfer Capacitance Crss - 210 - pF VGS =0 VDS=15V f =1.0MHz Guaranteed Avalanche Characteristics Single Pulse Avalanche Energy 3 EAS 63 - - mJ VD=25V, L=0.1mH, IAS=24A Source-Drain Diode Diode Forward Voltage 2 VSD - - 1 V IS=1A, VGS=0, TJ=25°C Continuous Source Current 1,4 IS - - 60 A Pulsed Source Current 2,4 ISM - - 180 A VD=VG=0, Force Current Reverse Recovery Time Trr - 14 - nS Reverse Recovery Charge Qrr - 5 - nC IF=30A, dl/dt=100A/µS, TJ=25°C Note: 1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state 2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A 4. The power dissipation is limited by 150°C juncti on temperature 5. The Min. value is 100% EAS tested guarantee. 6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. |
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