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SSPR60N03 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSPR60N03
상세설명  N-Channel Enhancement Mode Power MOSFET
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSPR60N03 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSPR60N03
60A , 30V , RDS(ON) 6 mΩ
N-Channel Enhancement Mode Power MOSFET
20-May-2014 Rev.A
Page 2 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS=0, ID= 250uA
Gate-Threshold Voltage
VGS(th)
1
-
2.5
V
VDS=VGS, ID=250uA
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VGS= ±20V
-
-
1
VDS=24V, VGS=0, TJ=25°C
Drain-Source Leakage Current
IDSS
-
-
5
uA
VDS=24V, VGS=0, TJ=55°C
-
-
6
VGS=10V, ID=30A
Static Drain-Source On-Resistance
2
RDS(ON)
-
-
8
m
VGS=4.5V, ID=15A
Gate Resistance
Rg
-
1.6
2.8
f =1.0MHz
Total Gate Charge(10V)
Qg
-
20
-
Gate-Source Charge
Qgs
-
7.6
-
Gate-Drain Change
Qgd
-
7.2
-
nC
ID=15A
VDS=15V
VGS=4.5V
Turn-on Delay Time
2
Td(on)
-
7.8
-
Rise Time
Tr
-
15
-
Turn-off Delay Time
Td(off)
-
37.3
-
Fall Time
Tf
-
10.6
-
nS
VDD=15V
ID=15A
VGS=10V
RG=3.3
Input Capacitance
Ciss
-
2295
-
Output Capacitance
Coss
-
267
-
Reverse Transfer Capacitance
Crss
-
210
-
pF
VGS =0
VDS=15V
f =1.0MHz
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy
3
EAS
63
-
-
mJ
VD=25V, L=0.1mH, IAS=24A
Source-Drain Diode
Diode Forward Voltage
2
VSD
-
-
1
V
IS=1A, VGS=0, TJ=25°C
Continuous Source Current
1,4
IS
-
-
60
A
Pulsed Source Current
2,4
ISM
-
-
180
A
VD=VG=0, Force Current
Reverse Recovery Time
Trr
-
14
-
nS
Reverse Recovery Charge
Qrr
-
5
-
nC
IF=30A, dl/dt=100A/µS,
TJ=25°C
Note:
1.
The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD=25V,VGS=10V,L=0.1mH,IAS=48A
4. The power dissipation is limited by 150°C juncti on temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.


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