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FKBP200 데이터시트(HTML) 2 Page - EIC discrete Semiconductors

부품명 FKBP200
상세내용  FAST RECOVERY BRIDGE RECTIFIERS
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제조사  EIC [EIC discrete Semiconductors]
홈페이지  http://www.eicsemi.com
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FKBP200 데이터시트(HTML) 2 Page - EIC discrete Semiconductors

   
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RATING AND CHARACTERISTIC CURVES ( FKBP200 - FKBP210 )
FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
+
NOTES :
1. Rise Time = 7 ns max., Input Impedance = 1 megaohm, 22 pF.
2. Rise time = 10 ns max., Source Impedance = 50 ohms.
3. All Resistors = Non-inductive Types.
FIG.2 - DERATING CURVE FOR OUTPUT
FIG.3 - MAXIMUM NON-REPETITIVE PEAK
RECTIFIED CURRENT
FORWARD SURGE CURRENT
0
25
50
75
100
125
150
175
1
2
4
6
10
20
40
60
100
CASE TEMPERATURE, (
°C)
NUMBER OF CYCLES AT 60Hz
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
PER DIODE
PER DIODE
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLTAGE, VOLTS
60Hz RESISTIVE OR INDUCTIVE LOAD
2.0
1.5
1.0
0.5
2.5
100
10
1.0
40
0
50
0
30
20
10
0.1
10
80
0.01
0.01
1.0
0.1
100
140
0
20
40
60
120
PERCENT OF RATED REVERSE VOLTAGE, (%)
TJ = 25
°C
TJ = 100
°C
TJ = 25
°C
Pulse Width = 300
µs
2% Duty Cycle
Tc = 50
°C
+ 0.5 A
0
- 0.25 A
- 1.0 A
Trr
1 cm
SET TIME BASE FOR 50/100 ns/cm
1
50
10
PULSE
GENERATOR
( NOTE 2 )
OSCILLOSCOPE
( NOTE 1 )
D.U.T.
50 Vdc
(approx)


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