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GRN3 데이터시트(HTML) 1 Page - EIC discrete Semiconductors

부품명 GRN3
상세내용  GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS
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제조사  EIC [EIC discrete Semiconductors]
홈페이지  http://www.eicsemi.com
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GRN3 데이터시트(HTML) 1 Page - EIC discrete Semiconductors

   
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GRN3 - GRN7
GLASS PASSIVATED JUNCTION
FAST RECOVERY RECTIFIERS
PRV : 50 - 600 Volts
Io : 1.0 Amperes
FEATURES :
* Glass passivated chip
* High current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
MECHANICAL DATA :
* Case : SMA Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Lead Formed for Surface Mount
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.067 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
GRN3
GRN4
GRN5
GRN6
GRN7
UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
50
100
200
400
600
V
Maximum RMS Voltage
VRMS
35
70
140
280
420
V
Maximum DC Blocking Voltage
VDC
50
100
200
400
600
V
Maximum Average Forward Current
Ta = 50
°C
IF(AV)
1.0
A
Peak Forward Surge Current,
8.3ms Single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IF = 1.0 A
VF
1.2
V
Maximum DC Reverse Current
Ta = 25
°C
IR
5.0
µA
at Rated DC Blocking Voltage
Ta = 100
°C
IR(H)
100
µA
Maximum Reverse Recovery Time ( Note 1 )
Trr
150
ns
Typical Junction Capacitance ( Note 2 )
CJ
15
pf
Junction Temperature Range
TJ
- 65 to + 150
°C
Storage Temperature Range
TSTG
- 65 to + 150
°C
Notes :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC
Page 1 of 2
Rev. 01 : April 17, 2002
RATING
IFSM
30
A
2.0
± 0.2
2.1
± 0.2
SMA (DO-214AC)
1.2
± 0.2
2.6
± 0.15
Dimensions in millimeter
1.1
± 0.3
0.2
± 0.07


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