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SI4972DY 데이터시트(PDF) 1 Page - Vishay Siliconix |
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1 / 15 page Vishay Siliconix Si4972DY Document Number: 73849 S09-0138-Rev. D, 02-Feb-09 www.vishay.com 1 Dual N-Channel 30-V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available •TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Logic DC/DC for Notebook PC PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) a Qg (Typ.) Channel 1 30 0.0145 at VGS = 10 V 10.8 8.3 0.0195 at VGS = 4.5 V 9.3 Channel 2 30 0.0265 at VGS = 10 V 7.2 4 0.036 at VGS = 4.5 V 6.2 Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 10 s. d. Maximum under steady state conditions is 110 °C/W (Ch 1) and 120 °C/W (Ch 2). ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Channel 1 Channel 2 Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID 10.8 7.2 A TC = 70 °C 8.7 5.7 TA = 25 °C 8.7b,c 6.4b,c TA = 70 °C 6.9b,c 5.1b,c Pulsed Drain Current (10 µs Pulse Width) IDM 20 20 Source-Drain Current Diode Current TC = 25 °C IS 2.5 2.1 TA = 25 °C 1.6b,c 1.6b,c Pulsed Source-Drain Current ISM 20 20 Single Pulse Avalanche Current L = 0.1 mH IAS 15 6 Avalanche Energy EAS 11 1.8 mJ Maximum Power Dissipation TC = 25 °C PD 3.1 2.5 W TC = 70 °C 2.1 1.6 TA = 25 °C 2.0b,c 2.0b,c TA = 70 °C 1.25b,c 1.25b,c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Symbol Channel 1 Channel 2 Unit Typical Maximum Typical Maximum Maximum Junction-to-Ambientb, d t ≤ 10 s RthJA 52 62.5 55 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady RthJF 32 40 40 50 S1 D1 G1 D1 S2 D2 G2 D2 SO-8 5 6 7 8 Top View 2 3 4 1 Ordering Information: Si4972DY-T1-E3 (Lead (Pb)-free) Si4972DY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET D1 G1 S1 D2 G2 S2 N-Channel MOSFET |
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