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MC-4R256FKK8K-840 데이터시트(PDF) 10 Page - Elpida Memory |
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MC-4R256FKK8K-840 데이터시트(HTML) 10 Page - Elpida Memory |
10 / 13 page MC-4R256FKK8K Preliminary Data Sheet E0253N10 (Ver. 1.0) 10 RIMM Module Current Profile IDD RIMM module power conditions Note1 MAX. Unit IDD1 One RDRAM device per channel in Read Note2, balance in NAP mode 1435 mA IDD2 One RDRAM device per channel in Read Note2, balance in Standby mode 1950 mA IDD3 One RDRAM device per channel in Read Note2, balance in Active mode 2220 mA IDD4 One RDRAM device per channel in Write, balance in NAP mode 1555 mA IDD5 One RDRAM device per channel in Write, balance in Standby mode 2070 mA IDD6 One RDRAM device per channel in Write, balance in Active mode 2340 mA Notes 1. Actual power will depend on individual RDRAM component specifications, memory controller and usage patterns. Please refer to specific RIMM module vendor data sheets for additional information. Power does not include Refresh Current. Max current computed for x16 256Mb RDRAM components. x18 288Mb RDRAM components use 8 mA more current per RDRAM device in Read and 60mA more current per RDRAM device in Write. 2. I/O current is a function of the % of 1’s, to add I/O power for 50 % 1’s for a x16 need to add 257mA or 290mA for x18 ECC module for the following : VDD = 2.5V, VTERM = 1.8V, VREF = 1.4V and VDIL = VREF − 0.5V. |
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