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MC-4R512FKE6D-845 데이터시트(PDF) 1 Page - Elpida Memory

부품명 MC-4R512FKE6D-845
상세설명  Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
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제조업체  ELPIDA [Elpida Memory]
홈페이지  http://www.elpida.com/en
Logo ELPIDA - Elpida Memory

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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local Elpida Memory, Inc. for
availability and additional information.
MOS INTEGRATED CIRCUIT
MC-4R512FKE6D
Direct Rambus DRAM RIMM
TM Module
512M-BYTE (256M-WORD x 16-BIT)
DATA SHEET
Document No. E0077N20 (Ver 2.0)
Date Published June 2002 (K) Japan
URL: http://www.elpida.com
Elpida Memory, Inc. 2001-2002
NEC Corporation. 2000
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.
Description
The Direct Rambus RIMM module is a general-purpose high-performance memory module subsystem suitable for
use in a broad range of applications including computer memory, personal computers, workstations, and other
applications where high bandwidth and low latency are required.
MC-4R512FKE6D modules consists of sixteen 288M Direct Rambus DRAM (Direct RDRAM) devices (
µPD488588).
These are extremely high-speed CMOS DRAMs organized as 16M words by 18 bits. The use of Rambus Signaling
Level (RSL) technology permits 600MHz, 711MHz or 800MHz transfer rates while using conventional system and
board design technologies.
Direct RDRAM devices are capable of sustained data transfers at 1.25 ns per two bytes (10 ns per sixteen bytes).
The architecture of the Direct RDRAM enables the highest sustained bandwidth for multiple, simultaneous,
randomly addressed memory transactions. The separate control and data buses with independent row and column
control yield over 95 % bus efficiency. The Direct RDRAM's 32 banks support up to four simultaneous transactions
per device.
Features
• 184 edge connector pads with 1mm pad spacing
• 512 MB Direct RDRAM storage
• Each RDRAMhas 32 banks, for 512 banks total on module
• Gold plated contacts
• RDRAMs use Chip Scale Package (CSP)
• Serial Presence Detect support
• Operates from a 2.5 V supply
• Powerdown self refresh modes
• Separate Row and Column buses for higher efficiency
• Over Drive Factor (ODF) support


유사한 부품 번호 - MC-4R512FKE6D-845

제조업체부품명데이터시트상세설명
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   Direct Rambus DRAM RIMM Module 512M-BYTE (256M-WORD x 16-BIT)
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유사한 설명 - MC-4R512FKE6D-845

제조업체부품명데이터시트상세설명
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