2N2060M

SILICON

DUAL NPN TRANSISTOR

DESCRIPTION:

The CENTRAL SEMICONDUCTOR 2N2060M is a silicon

dual NPN transistor utilizing two individual chips mounted

in a hermetically sealed metal case designed for

differential amplifier applications.

MARKING: FULL PART NUMBER

MAXIMUM RATINGS: (TA=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCER

80

V

Collector-Emitter Voltage

VCEO

60

V

Emitter-Base Voltage

VEBO

7.0

V

Continuous Collector Current

IC

500

mA

Power Dissipation (One Die)

PD

500

mW

Power Dissipation (Both Dice)

PD

600

mW

Power Dissipation (One Die, TC=25°C)

PD

1.5

W

Power Dissipation (Both Dice, TC=25°C)

PD

3.0

W

Operating and Storage Junction Temperature

TJ, Tstg

-65 to +200

°C

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=80V

2.0

nA

IEBO

VEB=5.0V

2.0

nA

BVCBO

IC=100μA

100

V

BVCER

IC=10mA, RBE=10Ω

80

V

BVCEO

IC=30mA

60

V

BVEBO

IE=100μA

7.0

V

VCE(SAT)

IC=50mA, IB=5.0mA

1.2

V

VBE(SAT)

IC=50mA, IB=5.0mA

0.9

V

hFE

VCE=5.0V, IC=10μA

25

150

hFE

VCE=5.0V, IC=100μA

30

150

hFE

VCE=5.0V, IC=1.0mA

40

150

hFE

VCE=5.0V, IC=10mA

50

200

fT

VCE=10V, IC=50mA, f=20MHz

60

MHz

Cob

VCB=10V, IE=0, f=1.0MHz

15

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

85

pF

NF

VCE=10V, IC=300μA, RS=510Ω,

f=1.0kHz, BW=200Hz

8.0

dB

TO-78 CASE

R1 (2-December 2013)

www.centr a lsemi.com