NPN SILICON EPITAXIAL TRANSISTORS

2N5088

2N5089

TO-92

CBE

Amplifier Transistors

ABSOLUTE MAXIMUM RATINGS

DESCRIPTION

SYMBOL

2N5088

2N5089

UNITS

Collector -Base Voltage

VCBO

35

30

V

Collector -Emitter Voltage

VCE0

30

25

V

Emitter -Base Voltage

VEBO

4.5

V

Collector Current- Continuous

IC

50

mA

Power Dissipation@ Ta=25 deg C

PD

625

mW

Derate Above 25 deg C

5.0

mW/deg C

Power Dissipation@ Tc=25 deg C

PD

1.5

W

Derate Above 25 deg C

12

mW/deg C

Junction Temperature

Tj

150

deg C

Storage Temperature

Tstg

-55 to +150

deg C

THERMAL RESISTANCE

Junction to Ambient

Rth(j-a) (1)

357

deg C/W

Junction to Case

Rth(j-c)

125

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

Min

Max

UNITS

Collector -Emitter Voltage

VCEO*

IC=1mA, IB=0

2N5088

30

-

V

2N5089

25

-

V

Collector -Base Voltage

VCBO

IC=100uA,IE=0

2N5088

35

-

V

2N5089

30

-

V

Collector-Cut off Current

ICBO

VCB=20V, IE=0

2N5088

-50

nA

VCB=15V, IE=0

2N5089

-50

nA

Emitter-Cut off Current

IEBO

VEB=3.0V, IC=0

2N5088

-50

nA

VEB=4.5V, IC=0

2N5089

-

100

nA

Continental Device India Limited

Data Sheet

Page 1 of 4

E B

C

Continental Device India Limited

An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company