SI3993DV datasheet(2/10 Pages) VISHAY

부품명	SI3993DV

상세설명	Dual P-Channel 30-V (D-S) MOSFET

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Document Number: 72320

S09-2275-Rev. C, 02-Nov-09

Vishay Siliconix

Si3993DV

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS

25 °C, unless otherwise noted

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1

- 3

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 30 V, VGS = 0 V

- 1

µA

VDS = - 30 V, VGS = 0 V, TJ = 55 °C

- 5

On-State Drain Currenta

ID(on)

VDS ≤ - 5 V, VGS = - 10 V

- 5

A

Drain-Source On-State Resistancea

RDS(on)

VGS = - 10 V, ID = - 2.2 A

0.107

0.133

Ω

VGS = - 4.5 V, ID = - 1.6 A

0.194

0.245

Forward Transconductancea

gfs

VDS = - 5 V, ID = - 2.2 A

4S

Diode Forward Voltagea

VSD

IS = - 1.05 A, VGS = 0 V

- 0.82

- 1.10

V

Dynamicb

Total Gate Charge

Qg

VDS = - 15 V, VGS = - 4.5 V, ID = - 2.2 A

3.1

5

nC

Gate-Source Charge

Qgs

1.0

Gate-Drain Charge

Qgd

1.6

Turn-On Delay Time

td(on)

VDD = - 15 V, RL = 15 Ω

ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω

10

15

ns

Rise Time

tr

16

25

Turn-Off Delay Time

td(off)

17

25

Fall Time

tf

12

20

Source-Drain Reverse Recovery Time

trr

IF = - 1.05 A, dI/dt = 100 A/µs

18

30

Output Characteristics

0

1

2

3

4

5

6

7

8

012345

VDS - Drain-to-Source Voltage (V)

VGS = 10 V thru 5 V

4 V

3 V

Transfer Characteristics

0

1

2

3

4

5

6

7

8

012345

VGS - Gate-to-Source Voltage (V)

TC = - 55 °C

125 °C

25 °C

유사한 부품 번호 - SI3993DV

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI3993DV	209Kb / 10P	Dual P-Channel 30-V (D-S) MOSFET 08-Feb-17
VBsemi Electronics Co.,...	SI3993DV-T1-E3	520Kb / 9P	Dual P-Channel 20 V (D-S) MOSFET
VBsemi Electronics Co.,...	SI3993DV-T1-GE3	519Kb / 9P	Dual P-Channel 20 V (D-S) MOSFET
Vishay Siliconix	SI3993DV	209Kb / 10P	Dual P-Channel 30-V (D-S) MOSFET 08-Feb-17

More results

유사한 설명 - SI3993DV

제조업체	부품명	데이터시트	상세설명
Vishay Siliconix	SI4953DY	43Kb / 4P	Dual P-Channel 30-V(D-S) MOSFET Rev. E, 18-Aug-03
	SIA931DJ	277Kb / 9P	Dual P-Channel 30-V (D-S) MOSFET Rev. A, 13-May-13
	SI7997DP	482Kb / 13P	Dual P-Channel 30 V (D-S) MOSFET Rev. A, 09-Aug-10
Anachip Corp	AF4935	149Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI4927DY	271Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 02-Jan-06
	SI7941DP	274Kb / 3P	Dual P-Channel 30-V (D-S) MOSFET 31-May-04
	SI7921DN	186Kb / 5P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Jun-05
Guangdong Kexin Industr...	KI4923DY	51Kb / 2P	Dual P-Channel 30-V (D-S) MOSFET
Vishay Siliconix	SI7945DP	207Kb / 4P	Dual P-Channel 30-V (D-S) MOSFET Rev. B, 27-Feb-06
Guangdong Kexin Industr...	KI4953DY	50Kb / 2P	Dual P-Channel 30-V(D-S) MOSFET

More results

SI3993DV 데이터시트(PDF) 2 Page - Vishay Siliconix

SI3993DV 데이터시트(HTML) 2 Page - Vishay Siliconix

유사한 부품 번호 - SI3993DV

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