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FM3100 데이터시트(PDF) 1 Page - Formosa MS

부품명 FM3100
상세설명  Silicon epitaxial planer type
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제조업체  FORMOSA [Formosa MS]
홈페이지  http://www.formosams.com
Logo FORMOSA - Formosa MS

FM3100 데이터시트(HTML) 1 Page - Formosa MS

  FM3100 Datasheet HTML 1Page - Formosa MS FM3100 Datasheet HTML 2Page - Formosa MS  
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FM320 THRU FM3100
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC DO-214AB
Terminals : Solder plated, s olderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.00585 ounce, 0.195 gr am
(V)
(V)
(V)
(V)
(oC)
FM320
SS32
20
14
20
FM330
SS33
30
21
30
FM340
SS34
40
28
40
FM350
SS35
50
35
50
FM360
SS36
60
42
60
FM380
SS38
80
56
80
FM3100
S310
100
70
100
0.50
0.75
0.85
-55 to +125
-55 to +150
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS (AT TA=25
oC unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
IO
3.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
IFSM
80
A
VR = VRRM TA =
25
oC
0.5
mA
VR = VRRM TA = 125
oC
20
mA
Thermal resistance
Junction to ambient
R
qJA
55
oC / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
CJ
250
pF
Storage temperature
TSTG
-55
+150
oC
Reverse current
IR
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.276(7.0)
0.260(6.6)
0.012(0.3) Typ.
0.189(4.8)
0.173(4.4)
0.244(6.2)
0.228(5.8)
0.087(2.2)
0.071(1.8)
0.040 (1.0) Typ.
0.040(1.0) Typ.
Dimensions in inches and (millimeters)
SMC
0.152(3.8)
0.144(3.6)
0.032(0.8) Typ.


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