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IRF630S 데이터시트(PDF) 3 Page - Vishay Siliconix |
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IRF630S 데이터시트(HTML) 3 Page - Vishay Siliconix |
3 / 9 page Document Number: 91032 www.vishay.com S11-1047-Rev. C, 30-May-11 3 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF630S, SiHF630S Vishay Siliconix Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. When mounted on 1" square PCB (FR-4 or G-10 material). TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS MOSFET symbol showing the integral reverse p - n junction diode -- 9.0 A Pulsed Diode Forward Currenta ISM -- 36 Body Diode Voltage VSD TJ = 25 °C, IS = 9.0 A, VGS = 0 Vb -- 2.0 V Body Diode Reverse Recovery Time trr TJ = 25 °C, IF = 5.9 A, dI/dt = 100 A/μsb - 170 340 ns Body Diode Reverse Recovery Charge Qrr -1.1 2.2 μC Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT S D G 91032_01 Bottom Top V GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 25 °C 4.5 V VDS, Drain-to-Source Voltage (V) 100 101 101 100 10-1 10-1 101 100 10-1 100 101 VDS, Drain-to-Source Voltage (V) Bottom Top V GS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 20 µs Pulse Width T C = 150 °C 91032_02 4.5 V 10-1 |
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