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STP110N55F6 데이터시트(PDF) 5 Page - STMicroelectronics |
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STP110N55F6 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 11 page STP110N55F6 Electrical characteristics Doc ID 019059 Rev 1 5/11 Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit ISD Source-drain current - 110 A ISDM (1) 1. Current limited by package. Source-drain current (pulsed) - 440 A VSD (2) 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Forward on voltage ISD = 110 A, VGS = 0 - 1.5 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 110 A, VDD = 44 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 4) - TBD TBD TBD ns nC A |
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