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2SK2649 데이터시트(PDF) 2 Page - Fuji Electric |
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2SK2649 데이터시트(HTML) 2 Page - Fuji Electric |
2 / 2 page N-channel MOS-FET 2SK2649-01R 800V 1,5Ω 9A 100W FAP-IIS Series > Characteristics Typical Output Characteristics Drain-Source On-State Resistance vs. Tch Typical Transfer Characteristics ↑ ID=f(VDS); 80µs pulse test; TC=25°C ↑ RDS(on) = f(Tch); ID=4,5A; VGS=10V ↑ ID=f(VGS); 80µs pulse test; VDS=25V; Tch=25°C 1 2 3 VDS [V] → Tch [°C] → VGS [V] → Typical Drain-Source On-State-Resistance vs. ID Typical Forward Transconductance vs. ID Gate Threshold Voltage vs. Tch ↑ RDS(on)=f(ID); 80µs pulse test; TC=25°C ↑ gfs=f(ID); 80µs pulse test; VDS=25V; Tch=25°C ↑ VGS(th)=f(Tch); ID=1mA; VDS=VGS 4 5 6 ID [A] → ID [A] → Tch [°C] → Typical Capacitances vs. VDS Avalanche Energy Derating Forward Characteristics of Reverse Diode ↑ C=f(VDS); VGS=0V; f=1MHz ↑ Eas=f(starting Tch); VCC=80V; IAV=9A ↑ IF=f(VSD); 80µs pulse test; VGS=0V 7 8 9 VDS [V] → Starting Tch [°C] → VSD [V] → Allowable Power Dissipation vs. TC Safe Operation Area PD=f(Tc) ID=f(VDS): D=0,01, Tc=25°C ↑ Transient Thermal impedance ↑ 10 ↑ 12 Zthch=f(t) parameter:D=t/T Tc [°C] → VDS [V] → t [s] → This specification is subject to change without notice! |
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