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SI7860DP-T1 데이터시트(PDF) 1 Page - Vishay Siliconix

부품명 SI7860DP-T1
상세설명  N-Channel Reduced Qg, Fast Switching MOSFET
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제조업체  VISHAY [Vishay Siliconix]
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Vishay Siliconix
Si7860DP
Document Number: 71854
S09-0222-Rev. E, 09-Feb-09
www.vishay.com
1
N-Channel Reduced Qg, Fast Switching MOSFET
FEATURES
Halogen-free According to IEC 61249-2-21
Available
TrenchFET® Power MOSFET
PWM Optimized for High Efficiency
New Low Thermal Resistance
PowerPAK® Package with Low 1.07 mm Profile
100 % Rg Tested
APPLICATIONS
Buck Converter
- High Side or Low Side
Synchronous Rectifier
- Secondary Rectifier
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)ID (A)
30
0.008 at VGS = 10 V
18
0.011 at VGS = 4.5 V
15
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7860DP-T1
Si7860DP-T1-E3 (Lead (Pb)-free)
Si7860DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
G
D
S
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
VDS
30
V
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)
a
TA = 25 °C
ID
18
11
A
TA = 70 °C
15
8
Pulsed Drain Current
IDM
± 50
Continuous Source Current (Diode Continuous)a
IS
4.1
1.5
Avalanche Current
L = 0.1 mH
IAS
30
Single Pulse Avalanche Energy
EAS
45
mJ
Maximum Power Dissipationa
TA = 25 °C
PD
51.8
W
TA = 70 °C
3.2
1.1
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
Soldering Recommendations (Peak Temperature)b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)a
t
≤ 10 s
RthJA
20
25
°C/W
Steady State
56
70
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.8
2.3


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