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SI7860DP-T1 데이터시트(PDF) 1 Page - Vishay Siliconix |
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SI7860DP-T1 데이터시트(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si7860DP Document Number: 71854 S09-0222-Rev. E, 09-Feb-09 www.vishay.com 1 N-Channel Reduced Qg, Fast Switching MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • PWM Optimized for High Efficiency • New Low Thermal Resistance • PowerPAK® Package with Low 1.07 mm Profile • 100 % Rg Tested APPLICATIONS • Buck Converter - High Side or Low Side • Synchronous Rectifier - Secondary Rectifier PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) 30 0.008 at VGS = 10 V 18 0.011 at VGS = 4.5 V 15 1 2 3 4 5 6 7 8 S S S G D D D D 6.15 mm 5.15 mm PowerPAK SO-8 Bottom View Ordering Information: Si7860DP-T1 Si7860DP-T1-E3 (Lead (Pb)-free) Si7860DP-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET G D S Notes: a. Surface Mounted on 1" x 1" FR4 board. b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. * Pb containing terminations are not RoHS compliant, exemptions may apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID 18 11 A TA = 70 °C 15 8 Pulsed Drain Current IDM ± 50 Continuous Source Current (Diode Continuous)a IS 4.1 1.5 Avalanche Current L = 0.1 mH IAS 30 Single Pulse Avalanche Energy EAS 45 mJ Maximum Power Dissipationa TA = 25 °C PD 51.8 W TA = 70 °C 3.2 1.1 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b,c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET)a t ≤ 10 s RthJA 20 25 °C/W Steady State 56 70 Maximum Junction-to-Case (Drain) Steady State RthJC 1.8 2.3 |
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