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CDBT0540-G 데이터시트(PDF) 1 Page - Comchip Technology |
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CDBT0540-G 데이터시트(HTML) 1 Page - Comchip Technology |
1 / 2 page CDBT0540-G RoHS Device SMD Schottky Barrier Diode QW-BA016 Page 1 REV:B Features -Small surface mount type. -Low reverse current and low forward voltage. -High reliability. Marking: D3A Dimensions in inches and (millimeter) Parameter Value Unit Peak reverse voltage DC reverse voltage Peak surge forward voltage Mean rectifying current Power dissipation Thermal resistance, junction to ambient Junction temperature Storage temperature VRM VR IFSM IO PD RθJA TJ TSTG 40 40 3 0.5 250 500 125 -40 to +125 V OC/W V A A mW OC OC SOT-23 3 1 2 0.119(3.00) 0.110(2.80) 0.056(1.40) 0.047(1.20) 0.083(2.10) 0.066(1.70) 0.044(1.10) 0.035(0.90) 0.020(0.50) 0.013(0.35) 0.006(0.15) 0.002(0.05) 0.103(2.60) 0.086(2.20) 0.006(0.15) max 0.007(0.20) min Symbol Symbol Parameter Conditions Min Max Unit Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals IR=100μA IF=500mA VR=10V VR=30V VR=0V, f=1MHz VR=10V, f=1MHz VBR VF IR CT 40 0.55 30 50 V V μA μA pF pF Typ. 125 20 Comchip Technology CO., LTD. Maximum Ratings (at Ta=25°C unless otherwise noted) Electrical Characteristics (at Ta=25°C unless otherwise noted) |
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