2SK3224 datasheet(1/4 Pages) NEC

부품명	2SK3224

상세설명	SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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1999

MOS FIELD EFFECT TRANSISTOR

2SK3224

SWITCHING

N-CHANNEL POWER MOS FET

INDUSTRIAL USE

DATA SHEET

Document No.

D13797EJ1V0DS00 (1st edition)

Date Published

May 1999 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

This product is N-Channel MOS Field Effect Transistor

designed for high current switching applications.

FEATURES

• Low On-State Resistance

RDS(on)1 = 40 m

Ω MAX. (VGS = 10 V, ID = 10 A)

RDS(on)2 = 60 m

Ω MAX. (VGS = 4.0 V, ID = 10 A)

• Low Ciss : Ciss = 790 pF TYP.

• Built-in Gate Protection Diode

• TO-251/TO-252 package

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

Drain to Source Voltage

VDSS

60

V

Gate to Source Voltage

VGSS(AC)

±20

V

Gate to Source Voltage

VGSS(DC)

+20,

−10

V

Drain Current (DC)

ID(DC)

±20

A

Drain Current (Pulse)

Note1

ID(pulse)

±70

A

Total Power Dissipation (TC = 25°C)

PT

25

W

Total Power Dissipation (TA = 25°C)

PT

1.0

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Single Avalanche Current

Note2

IAS

10

A

Single Avalanche Energy

Note2

EAS

10

mJ

Notes 1. PW

≤ 10

µs, Duty cycle ≤ 1 %

2. Starting Tch = 25 °C, RG = 25

Ω, VGS = 20 V

→ 0 V

THERMAL RESISTANCE

Channel to Case

Rth(ch-C)

5.0

°C/W

Channel to Ambient

Rth(ch-A)

125

°C/W

ORDERING INFORMATION

PART NUMBER

PACKAGE

2SK3224

TO-251

2SK3224-Z

TO-252

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Guangdong Kexin Industr...	2SK3224	45Kb / 1P	MOS Field Effect Transistor
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