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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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1N4448 데이터시트(PDF) 1 Page - General Semiconductor |
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1N4448 데이터시트(HTML) 1 Page - General Semiconductor |
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1 / 4 page  FEATURES Small Signal Diodes MECHANICAL DATA MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified DO-35 max. ∅ Cathode .020 (0.52) Mark max. ∅.079 (2.0) Dimensions in inches and (millimeters) Case: DO-35 Glass Case Weight: approx. 0.13 g 4/98 1N4448 Symbol Value Unit Reverse Voltage VR 75 V Peak Reverse Voltage VRM 100 V Rectified Current (Average) Half Wave Rectification with Resist. Load at Tamb = 25 °C and f ≥ 50 Hz I0 1501) mA Surge Forward Current at t < 1 s and Tj = 25 °C IFSM 500 mA Power Dissipation at Tamb = 25 °C Ptot 5001) mW Junction Temperature Tj 175 °C Storage Temperature Range TS –65 to +175 °C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. Silicon Epitaxial Planar Diode Fast switching diode. This diode is also available in other case styles including: the SOD-123 case with the type designation 1N4448W, the MiniMELF case with the type designation LL4448, and the SOT23 case with the type designation IMBD4448. ♦ ♦ ♦ |
유사한 부품 번호 - 1N4448 |
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유사한 설명 - 1N4448 |
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