전자부품 데이터시트 검색엔진 |
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TC3843 데이터시트(PDF) 1 Page - Transcom, Inc. |
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TC3843 데이터시트(HTML) 1 Page - Transcom, Inc. |
1 / 3 page TC3843 REV0_20070808 TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan, R.O.C. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P1 / 3 870~925 MHz Single-Bias GaAs Low Noise Amplifier FEATURES PHOTO ENLARGEMENT l 50 ohm matched for 870~925 MHz l 24 dBm Typical P1dB l 19 dB Typical Linear Power Gain l 36 dBm Typical IP3 l 1.1 dB Typical noise figure l Nominal PAE of 26% l Breakdown Voltage: BV DGO ≥ 15V l 6.0 Volt single bias l Suitable for High Reliability Application DESCRIPTION The TC3843 is a single -bias with 50 ohm matched GaAs FET. It is designed for low cost, high volume, applied for 870~925 MHz low noise amplifiers. It provides noise figure of 1.1 dB, gain of 19 dB and P1dB of 24 dBm, typically. The single positive drain bias is 6 V and the typical drain-source current is 160 mA. The device is packaged in a copper based ceramic 10-pin SMT packages. The copper based carrier of the package allows direct soldering of the device to the PCB. ELECTRICAL SPECIFICATIONS (TA=25℃) Symbol CONDITIONS MIN TYP MAX UNIT FREQ Frequency Range 870 925 MHz P1dB Output Power at 1dB Gain Compression Point, VDS = 6 V 22 24 dBm GL Linear Power Gain, VDS = 6 V 16 19 dB IP3 Intercept Point of the 3 rd-order Intermodulation, V DS = 6 V, *PSCL = 14 dBm 33 36 dBm NF Noise Figure, VDS = 6 V 1.1 1.5 dB PAE Power Added Efficiency at 1dB Compression Power 26 % IDS Drain -Source Current at VDS = 6 V 160 220 mA BVDGO Drain -Gate Breakdown Voltage at IDGO = 0.6 mA 15 18 Volts Note: *PSCL: Output Power of Single Carrier Level. |
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