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2SC2613 데이터시트(PDF) 1 Page - Hitachi Semiconductor |
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2SC2613 데이터시트(HTML) 1 Page - Hitachi Semiconductor |
1 / 7 page 2SC2613 Silicon NPN Triple Diffused Application High voltage, high speed and high power switching Outline 1. Base 2. Collector (Flange) 3. Emitter TO-220AB 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage V CBO 500 V Collector to emitter voltage V CEO 400 V Emitter to base voltage V EBO 7V Collector current I C 5A Collector peak current I C(peak) 10 A Base current I B 2.5 A Collector power dissipation P C* 1 40 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at T C = 25°C. |
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