November 2013

Thermal Characteristics

FQD6N25

250 V, 4.4 A, 1.0 Ω

Description

©2011 Fairchild Semiconductor Corporation

FQD6N25 Rev. C1

www.fairchildsemi.com

1

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor’s proprietary planar

stripe and DMOS technology. This advanced MOSFET

technology has been especially tailored to reduce on-state

resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are

suitable for switched mode power supplies, active power

factor correction (PFC), and electronic lamp ballasts.

Features

• Low Gate Charge (Typ. 6.6 nC)

• Low Crss (Typ. 7.5 pF)

• 100% Avalanche Tested

D-PAK

G

S

D

G

S

D

Symbol

Parameter

FQD6N25TM

Unit

Thermal Resistance, Junction to Case, Max.

2.78

Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.

110

50

• RoHS Compliant





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Maximum Lead Temperature for Soldering,

1/8" from Case for 5 Seconds.

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