전자부품 데이터시트 검색엔진 |
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2SJ549S 데이터시트(PDF) 3 Page - Hitachi Semiconductor |
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2SJ549S 데이터시트(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SJ549(L),2SJ549(S) 3 Main Characteristics 80 60 40 20 0 50 100 150 200 –10 –8 –6 –4 –2 0 –2 –4 –6 –8 –10 –5 V –4 V 0 –1–2–3 –4 –5 –10 V –3.5 V –3 V Pulse Test –10 –8 –6 –4 –2 –2.5 V –25 °C 25 °C Tc = 75 °C DS V = –10 V Pulse Test V = –2 V GS –0.1 –0.3 –1 –3 –10 –30 –100 –100 –20 –10 –2 –1 –0.2 –0.1 DS Ta = 25 °C Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS Typical Output Characteristics Gate to Source Voltage V (V) GS Typical Transfer Characteristics Drain to Source Voltage V (V) Maximum Safe Operation Area Operation in this area is limited by R DS(on) 10 µs –0.5 –5 –50 PW = 10 ms (1 shot) DC Operation (Tc=25 ℃) |
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