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2SK1838S 데이터시트(PDF) 3 Page - Hitachi Semiconductor |
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3 / 8 page 2SK1838(L), 2SK1838(S) 3 20 15 10 5 0 50 100 150 200 Case Temperature Tc (°C) Power vs. Temperature Derating Drain to Source Voltage V (V) DS 13 10 30 100 300 1000 0.1 0.3 1 3 10 100 s PW = 10 ms (1 shot) Operation in this area is limited by R (on) DS 1 ms Ta = 25°C 0.03 0.01 DC Operation (Tc = 25°C) Maximum Safe Operation Area Drain to Source Voltage V (V) DS 0 2 4 6 810 0.2 0.4 0.6 0.8 1.0 Pulse Test 8 V 10 V 6 V 4.5 V 4 V V = 3.5 V GS 5 V Typical Output Characteristics Gate to Source Voltage V (V) GS Tc = 75°C 25°C – 25°C Pulse Test V = 10 V DS 0 2 46 810 0.2 0.4 0.6 0.8 1.0 Typical Transfer Characteristics |
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