2N3735 datasheet(1/5 Pages) MICROSEMI

부품명	2N3735

상세설명	NPN SILICON SWITCHING TRANSISTOR

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제조업체	MICROSEMI [Microsemi Corporation]

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TECHNICAL DATA SHEET

6 Lake Street, Lawrence, MA 01841

1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803

Website: http: //www.microsemi.com

NPN SILICON SWITCHING TRANSISTOR

Qualified per MIL-PRF-19500/395

T4-LDS-0173 Rev. 1 (101069)

Page 1 of 5

DEVICES

LEVELS

2N3735

2N3735L

JAN

2N3737

2N3737UB

JANTX

JANTXV

JANS

ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Unit

Collector-Emitter Voltage

VCEO

40

Vdc

Collector-Base Voltage

VCBO

75

Vdc

Emitter-Base Voltage

VEBO

5

Vdc

Collector Current

IC

1.5

Adc

Total Power Dissipation

@ TA = +25°C

2N3735, 2N3735L

2N3737

2N3737UB

PT

1.0 (1)

0.5 (3)

0.5 (5)

W

Total Power Dissipation

@ TC = +25°C

2N3735, 2N3735L

2N3737

2N3737UB

PT

2.9 (2)

1.9 (4)

N/A

W

Operating & Storage Junction Temperature Range

TJ, Tstg

-65 to +200

°C

* Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding

devices.

(1) Derate linearly at 5.71 mW/°C above TA = +25°C

(2) Derate linearly at 16.6 mW/°C above TA = +25°C

(3) Derate linearly at 2.86 mW/°C above TA = +25°C

(4) Derate linearly at 11.3 mW/°C above TA = +25°C

(5) Derate linearly at 3.07 mW/°C above TA = +25°C

(6) TA = +55°C for UB on printed circuit board (PCB). PCB = FR4 .0625 inch (1.59MM) 1

– layer 1 oz Cu, horizontal, still air, pads (UB) = .034 inch (0.86 mm) x .048 inch (1.2

mm), RθJA with a defined thermal resistance condition included is measured at PT =

500mW.

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

Parameters / Test Conditions

Symbol

Min.

Max.

Unit

OFF CHARACTERTICS

Collector-Emitter Breakdown Voltage

IC = 10mAdc

V(BR)CEO

40

Vdc

Collector-Base Cutoff Current

VCB = 75Vdc

VCB = 30Vd

ICBO

10

250

μAdc

ηAdc

TO-5*

2N3735L

TO-39* (TO-205AD)

2N3735

3 PIN

2N3737UB

TO-46 (TO-206AB)

2N3737

유사한 부품 번호 - 2N3735

제조업체	부품명	데이터시트	상세설명
Semicoa Semiconductor	2N3735	46Kb / 2P	Type 2N3735 Geometry TBD Polarity NPN
Motorola, Inc	2N3735	126Kb / 4P	UHF/VHF TRANSISTOR PMP SILICON
Central Semiconductor C...	2N3735	22Kb / 1P	Small Signal Transistors
Microsemi Corporation	2N3735	184Kb / 5P	NPN SILICON SWITCHING TRANSISTOR
New Jersey Semi-Conduct...	2N3735	180Kb / 2P	GENERAL PURPOSE TRANSISTER

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유사한 설명 - 2N3735

제조업체	부품명	데이터시트	상세설명
STMicroelectronics	MJE13007	29Kb / 4P	SILICON NPN SWITCHING TRANSISTOR
Weitron Technology	MMBT4401	461Kb / 6P	Switching Transistor NPN Silicon
ON Semiconductor	BSV52LT1	51Kb / 4P	Switching Transistor (NPN Silicon) March, 2001 ??Rev. 1
Infineon Technologies A...	PZT3904	48Kb / 5P	NPN Silicon Switching Transistor Nov-30-2001
Siemens Semiconductor G...	SXT2222A	155Kb / 6P	NPN Silicon Switching Transistor
ON Semiconductor	MMBT4401LT1	213Kb / 8P	Switching Transistor(NPN Silicon) September, 2004 ??Rev. 4
STMicroelectronics	BU406	56Kb / 4P	SILICON NPN SWITCHING TRANSISTOR
New Jersey Semi-Conduct...	BUV42	114Kb / 4P	SILICON NPN SWITCHING TRANSISTOR
ON Semiconductor	MMBT4401WT1	119Kb / 6P	Switching Transistor NPN Silicon February, 2004 ??Rev. 1
Unisonic Technologies	BU406	213Kb / 4P	SILICON NPN SWITCHING TRANSISTOR
STMicroelectronics	MJE13007A	63Kb / 4P	SILICON NPN SWITCHING TRANSISTOR

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