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2SK1880L 데이터시트(PDF) 6 Page - Hitachi Semiconductor |
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2SK1880L 데이터시트(HTML) 6 Page - Hitachi Semiconductor |
6 / 9 page 2SK1880(L), 2SK1880(S) 6 Body to Drain Diode Reverse Recovery Time Reverse Drain Current I (A) DR di/dt = 100 A/ s V = 0 Ta = 25°C Pulse Test 5000 0.1 0.2 0.5 1 2 5 10 GS µ 2000 1000 500 200 100 50 Typical Capacitance vs. Drain to Source Voltage 1000 100 10 1 Ciss Coss Crss V = 0 f = 1 MHz GS 0 10 2030 4050 Drain to Source Voltage V (V) DS Dynamic Input Characteristics 1000 800 600 400 200 Gate Charge Qg (nc) 20 16 12 8 4 0 I = 1.5 A D V = 100 V 250 V 400 V DD 0 4 8 121620 V = 100 V 250 V 400 V DD VGS VDS Switching Characteristics Drain Current I (A) D t (on) t t t (off) 500 200 100 50 20 10 5 0.1 0.2 0.5 1 2 5 10 V = 10 V PW = 2 s duty 1% V 30 V GS DD µ = : < = d r f d |
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