전자부품 데이터시트 검색엔진 |
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2SK2726 데이터시트(PDF) 3 Page - Hitachi Semiconductor |
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2SK2726 데이터시트(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SK2726 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 500 — — V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±30 ——V I G = ±100µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±25V, VDS = 0 Zero gate voltege drain current I DSS —— 10 µAV DS = 500 V, VGS = 0 Gate to source cutoff voltage V GS(off) 2.5 — 3.5 V I D = 1mA, VDS = 10V* 1 Static drain to source on state resistance R DS(on) — 0.75 0.95 Ω I D = 4A, VGS = 10V* 1 Forward transfer admittance |y fs| 3.5 6.0 — S I D = 4A, VDS = 10V* 1 Input capacitance Ciss — 1100 — pF V DS = 10V Output capacitance Coss — 330 — pF V GS = 0 Reverse transfer capacitance Crss — 65 — pF f = 1MHz Total gate charge Qg — 21 — nc V DD = 400V Gate to source charge Qgs — 5 — nc V GS = 10V Gate to drain charge Qgd — 8 — nc I D = 7A Turn-on delay time t d(on) — 20 — ns V GS = 10V, ID = 4A Rise time t r — 65 — ns R L = 7.5Ω Turn-off delay time t d(off) —60— ns Fall time t f —40— ns Body to drain diode forward voltage V DF — 0.95 — V I D = 7A, VGS = 0 Body to drain diode reverse recovery time t rr — 260 — ns I F = 7A, VGS = 0 diF/ dt = 100A/ µs Note: 1. Pulse test |
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