전자부품 데이터시트 검색엔진 |
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2SK2938S 데이터시트(PDF) 3 Page - Hitachi Semiconductor |
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2SK2938S 데이터시트(HTML) 3 Page - Hitachi Semiconductor |
3 / 10 page 2SK2938(L),2SK2938(S) 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 60 ——V I D = 10mA, VGS = 0 Gate to source breakdown voltage V (BR)GSS ±20 ——V I G = ±100µA, VDS = 0 Gate to source leak current I GSS —— ±10 µAV GS = ±16V, VDS = 0 Zero gate voltege drain current I DSS ——10 µAV DS = 60 V, VGS = 0 Gate to source cutoff voltage V GS(off) 1.5 — 2.5 V I D = 1mA, VDS = 10V Static drain to source on state R DS(on) — 0.026 0.034 Ω I D = 15A, VGS = 10V Note4 resistance R DS(on) — 0.045 0.07 Ω I D = 15A, VGS = 4V Note4 Forward transfer admittance |y fs| 1117— S I D = 15A, VDS = 10V Note4 Input capacitance Ciss — 740 — pF V DS = 10V Output capacitance Coss — 380 — pF V GS = 0 Reverse transfer capacitance Crss — 140 — pF f = 1MHz Turn-on delay time t d(on) — 10 — ns I D = 15A, VGS = 10V Rise time t r — 160 — ns R L = 2Ω Turn-off delay time t d(off) — 100 — ns Fall time t f — 150 — ns Body–drain diode forward voltage V DF — 0.95 — V I F = 25A, VGS = 0 Body–drain diode reverse recovery time t rr — 40 — ns I F = 25A, VGS = 0 diF/ dt =50A/ µs Note: 4. Pulse test |
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