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2SK2980 데이터시트(PDF) 3 Page - Hitachi Semiconductor |
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2SK2980 데이터시트(HTML) 3 Page - Hitachi Semiconductor |
3 / 9 page 2SK2980 3 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V (BR)DSS 30 ——V I D = 100µA, VGS = 0 Gate to source breakdown V (BR)GSS +12 — — V I G = +100 µA, VDS = 0 voltage –10 — — V I G = –100µA, VDS = 0 Zero gate voltege drain current I DSS — — 1.0 µAV DS = 30 V, VGS = 0 Gate to source leak current I GSS —— ±5.0 µAV GS = ±8V, VDS = 0 Gate to source cutoff voltage V GS(off) 0.5 — 1.5 V I D = 10µA, VDS = 5V Static drain to source on state resistance R DS(on) — 0.2 0.28 Ω I D = 500 mA V GS = 4V Note3 Static drain to source on state resistance R DS(on) — 0.3 0.5 Ω I D = 500 mA V GS = 2.5V Note3 Forward transfer admittance |y fs| 1.2 2.0 — S I D = 500 mA V DS = 10V Note3 Input capacitance Ciss — 155 — pF V DS = 10V Output capacitance Coss — 75 — pF V GS = 0 Reverse transfer capacitance Crss — 35 — pF f = 1MHz Turn-on delay time t d(on) — 12 — ns V GS = 4V, ID = 500 mA Rise time t r — 30 — ns R L = 20Ω Turn-off delay time t d(off) —35— ns Fall time t f —30— ns Note: 3. Pulse test 4. Marking is “ZZ– ” |
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