전자부품 데이터시트 검색엔진 |
|
NE33284A-SL 데이터시트(PDF) 2 Page - NEC |
|
NE33284A-SL 데이터시트(HTML) 2 Page - NEC |
2 / 10 page NE33284A 2 ELECTRICAL CHARACTERISTICS (TA = 25 ˚C) PARAMETER SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS Gate to Source Leak Current IGSO 0.5 10 µAVGS = –3 V Saturated Drain Current IDSS 15 40 80 mA VDS = 2 V, VGS = 0 Gate to Source Cutoff Voltage VGS(off) –0.2 –0.8 –2.0 V VDS = 2 V, ID = 100 µA Transconductance gm 45 70 mS VDS = 2 V, ID = 10 mA Noise Figure NF 0.75 1.0 dB f = 12 GHz VDS = 2 V 0.35 0.45 f = 4 GHz ID = 10 mA Associated Gain Ga 9.5 10.5 dB f = 12 GHz 13.0 15.0 f = 4 GHz PRECAUTION: Avoid high static voltage and electric fields, because this device is Hetero Junction field effect transistor with AlGaAs shottky barrier gate. |
유사한 부품 번호 - NE33284A-SL |
|
유사한 설명 - NE33284A-SL |
|
|
링크 URL |
개인정보취급방침 |
ALLDATASHEET.CO.KR |
ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |