전자부품 데이터시트 검색엔진 |
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SSFT4002 데이터시트(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSFT4002 데이터시트(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
2 / 6 page SSFT4002 ©Silikron Semiconductor CO.,LTD. 2010.09.03 Version : 1.1(preliminary) page 2of6 www.silikron.com Electrical Characterizes @T A=25℃ unless otherwise specified Parameter Min. Typ. Max Units Conditions BVDSS Drain-to-Source breakdown voltage 40 — — V VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source on-resistance — 2.1 2.5 mΩ VGS = 10V, ID = 30A③ VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA IDSS Drain-to-Source leakage current — — 10 μA VDS = 40V, VGS = 0V — — 150 VDS = 40V, VGS = 0V, TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS = 24V Gate-to-Source reverse leakage — — -100 VGS = -24V Qg Total gate charge — 220 — nC ID = 75A VDS = 32V VGS = 10V③ Qgs Gate-to-Source charge — 56 — Qgd Gate-to-Drain("Miller") charge — 56 — td(on) Turn-on delay time — 33 — ns VDD = 20V ID = 75A RG = 3.0 Ω VGS = 10V③ tr Rise time — 133 — td(off) Turn-Off delay time — 120 — tf Fall time — 80 — Ciss Input capacitance — 15300 — pF VGS = 0V VDS = 25V ƒ = 1.0MHz Coss Output capacitance — 1290 — Crss Reverse transfer capacitance — 306 — Source-Drain Ratings and Characteristics Parameter Min. Typ. Max Units Conditions IS Continuous Source Current (Body Diode) — — 75 A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) ① — — 750 TJ = 25°C, IS = 75A, VGS = 0V③ VSD Diode Forward Voltage — 0.85 1.3 V TJ = 25°C, IF = 75A, VDD = 20V di/dt = 100A/μs③ trr Reverse Recovery Time — 37 45 ns TJ = 25°C, IF = 65A, VDD = 20V di/dt = 100A/μs③ Qrr Reverse Recovery Charge — 36 55 nC ton Forward Turn-on Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) |
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