NE334S01-T1B datasheet(2/12 Pages) NEC

부품명	NE334S01-T1B

상세설명	C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

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제조업체	NEC [NEC]

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NE334S01

ELECTRICAL CHARACTERISTICS (TA = 25

°°C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

TEST CONDITIONS

Gate to Source Leak Current

IGSO

0.5

10

mAVGS = -3 V

Saturated Drain Current

IDSS

20

80

150

mA

VDS = 2 V, VGS = 0 V

Gate to Source Cutoff Voltage

VGS(off)

-0.2

-0.9

-2.5

V

VDS = 2 V, ID = 100

mA

Transconductance

gm

70

85

mS

VDS = 2 V, ID = 14 mA

Noise Figure

NF

0.25

0.35

dB

VDS = 2 V, ID = 15 mA,

Associated Gain

Ga

15.0

16.0

dB

f = 4 GHz

유사한 부품 번호 - NE334S01-T1B

제조업체	부품명	데이터시트	상세설명
NEC	NE334S01-T1B	46Kb / 6P	C BAND SUPER LOW NOISE HJ FET
California Eastern Labs	NE334S01-T1B	46Kb / 6P	C BAND SUPER LOW NOISE HJ FET

More results

유사한 설명 - NE334S01-T1B

제조업체	부품명	데이터시트	상세설명
NEC	NE434S01	77Kb / 12P	C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE425S01	52Kb / 5P	C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE334S01	46Kb / 6P	C BAND SUPER LOW NOISE HJ FET
	NE434S01	41Kb / 5P	C BAND SUPER LOW NOISE HJ FET
	NE4210M01	79Kb / 12P	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
	NE325S01	51Kb / 5P	C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
California Eastern Labs	NE429M01	58Kb / 6P	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE32484A	63Kb / 12P	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
NEC	NE425S01	57Kb / 12P	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Renesas Technology Corp	NE3512S02	200Kb / 11P	C TO Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

More results

NE334S01-T1B 데이터시트(PDF) 2 Page - NEC

NE334S01-T1B 데이터시트(HTML) 2 Page - NEC

유사한 부품 번호 - NE334S01-T1B

유사한 설명 - NE334S01-T1B

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