전자부품 데이터시트 검색엔진 |
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SSPL2015F 데이터시트(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSPL2015F 데이터시트(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
2 / 8 page SSPL2015F ©Silikron Semiconductor CO.,LTD. 2013.10.16 Version : 1.0 page 2 of 8 www.silikron.com Thermal Resistance Symbol Characteristics Typ. Max. Units RθJC Junction-to-case ③ — 2.0 °C/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62 °C/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 °C/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 200 — — V VGS = 0V, ID= 250μA RDS(on) Static Drain-to-Source on-resistance — 0.13 0.15 Ω VGS=10V,ID =11A — 0.27 — TJ = 125°C VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — 2.26 — TJ = 125°C IDSS Drain-to-Source leakage current — — 1 μA VDS =200V,VGS = 0V — — 50 TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V — — -100 VGS = -20V Qg Total gate charge — 27 — nC ID = 11A, VDS=160V, VGS = 10V Qgs Gate-to-Source charge — 5.4 — Qgd Gate-to-Drain("Miller") charge — 11 — td(on) Turn-on delay time — 11 — nS VGS=10V, VDD =100V, RL=9.2Ω,RGEN=2.55Ω ID =11A tr Rise time — 23 — td(off) Turn-Off delay time — 22 — tf Fall time — 5.2 — Ciss Input capacitance — 1010 — pF VGS = 0V VDS = 25V ƒ = 1MHz Coss Output capacitance — 240 — Crss Reverse transfer capacitance — 57 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 18 ① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 72 A V SD Diode Forward Voltage — 0.87 1.3 V IS=11A, VGS=0V, TJ = 25°C trr Reverse Recovery Time — 128 — nS TJ = 25°C, IF =11A, di/dt = 100 A/μs Qrr Reverse Recovery Charge — 819 — nC |
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