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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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SSPL7508 데이터시트(PDF) 2 Page - Silikron Semiconductor Co.,LTD. |
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SSPL7508 데이터시트(HTML) 2 Page - Silikron Semiconductor Co.,LTD. |
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2 / 8 page  SSPL7508 ©Silikron Semiconductor CO.,LTD. 2011.11.28 Version : 1.0 page 2 of 8 www.silikron.com Thermal Resistance Symbol Characterizes Typ. Max. Units RθJC Junction-to-case ③ — 0.48 °C/W RθJA Junction-to-ambient (t ≤ 10s) ④ — 62 °C/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 °C/W Electrical Characterizes @T A=25℃ unless otherwise specified Symbol Parameter Min. Typ. Max. Units Conditions V(BR)DSS Drain-to-Source breakdown voltage 75 — — V VGS = 0V, ID= 250μA RDS(on) Static Drain-to-Source on-resistance — 6.25 8 mΩ VGS=10V,ID =70A — 11.6 — TJ = 125°C VGS(th) Gate threshold voltage 2 — 4 V VDS = VGS, ID = 250μA — 2.24 — TJ = 125°C IDSS Drain-to-Source leakage current — — 1 μA VDS =75V,VGS = 0V — — 50 TJ = 125°C IGSS Gate-to-Source forward leakage — — 100 nA VGS =20V -100 — — VGS = -20V Qg Total gate charge — 99.1 — nC ID = 120A, VDS=60V, VGS = 10V Qgs Gate-to-Source charge — 30.8 — Qgd Gate-to-Drain("Miller") charge — 38.6 — td(on) Turn-on delay time — 22.9 — nS VGS=10V, VDD =35V, RL=0.5Ω, RGEN=4.7Ω ID =70A tr Rise time — 96.1 — td(off) Turn-Off delay time — 58.3 — tf Fall time — 95.8 — Ciss Input capacitance — 5647 — pF VGS = 0V VDS = 25V ƒ = 1MHz Coss Output capacitance — 1037 — Crss Reverse transfer capacitance — 71 — Source-Drain Ratings and Characteristics Symbol Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current (Body Diode) — — 120 ① A MOSFET symbol showing the integral reverse p-n junction diode. ISM Pulsed Source Current (Body Diode) — — 480 A V SD Diode Forward Voltage — 0.96 1.3 V IS=120A,VGS=0V, TJ = 25°C trr Reverse Recovery Time — 52.2 — nS TJ = 25°C, IF =120A, di/dt = 100 A/μs Qrr Reverse Recovery Charge — 105.7 — nC |
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