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PF0414A 데이터시트(PDF) 2 Page - Hitachi Semiconductor

부품명 PF0414A
상세설명  MOS FET Power Amplifier Module for DCS 1800 Handy Phone
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제조업체  HITACHI [Hitachi Semiconductor]
홈페이지  http://www.renesas.com/eng
Logo HITACHI - Hitachi Semiconductor

PF0414A 데이터시트(HTML) 2 Page - Hitachi Semiconductor

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PF0414A
2
Electrical Characteristics (Tc = 25
°C)
Item
Symbol
Min
Typ
Max
Unit
Test Condition
Frequency range
f
1710
1785
MHz
Control voltage range
V
APC
0.5
3
V
Drain cutoff current
I
DS
100
µAV
DD = 11 V, VAPC = 0 V
Total efficiency
η
T
37
45
%
Pin = 2 mW, V
DD = 4.8 V,
2nd harmonic distortion
2nd H.D.
–45
–35
dBc
Pout = 1.8 W (at APC controlled),
3rd harmonic distortion
3rd H.D.
–45
–35
dBc
R
L = Rg = 50 Ω, Tc = 25°C
Input VSWR
VSWR (in)
1.5
3
Output power (1)
Pout (1)
2.0
2.4
W
Pin = 2 mW, V
DD = 4.8 V,
V
APC = 3 V, RL = Rg = 50 Ω,
Tc = 25
°C
Output power (2)
Pout (2)
1.2
1.5
W
Pin = 2 mW, V
DD = 4.3 V,
V
APC = 3 V, RL = Rg = 50 Ω,
Tc = 80
°C
Isolation
–40
–30
dBm
Pin = 2 mW, V
DD = 4.8 V,
V
APC = 0.5 V, RL = Rg = 50 Ω,
Tc = 25
°C
Switching time
tr, tf
0.9
2
µs
Pin = 2 mW, V
DD = 4.8 V,
Pout = 1.8 W, R
L = Rg = 50 Ω,
Tc = 25
°C
Stability
No parasitic oscillation
Pin = 2 mW, V
DD = 6 V,
Ids
≤ 0.9 A (only pulsed),
Pout
≤ 1.8 W (at APC controlled),
Rg = 50
Ω, t = 20 sec., Tc = 25°C,
Output VSWR = 10 : 1 All phases


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