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STF40N60M2 데이터시트(PDF) 5 Page - STMicroelectronics |
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STF40N60M2 데이터시트(HTML) 5 Page - STMicroelectronics |
5 / 22 page DocID024932 Rev 3 5/21 STB40N60M2, STP40N60M2, STW40N60M2 Electrical characteristics 21 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 34 A I SDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed) - 136 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 34 A, V GS = 0 - 1.6 V t rr Reverse recovery time I SD = 34 A, di/dt = 100 A/μs V DD = 60 V (see Figure 21) - 440 ns Q rr Reverse recovery charge - 8.2 μC I RRM Reverse recovery current - 37 A t rr Reverse recovery time I SD = 34 A, di/dt = 100 A/μs V DD = 60 V, T j = 150 °C (see Figure 21) - 568 ns Q rr Reverse recovery charge - 11.5 μC I RRM Reverse recovery current - 40.5 A |
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