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ES3EA 데이터시트(PDF) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
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ES3EA 데이터시트(HTML) 4 Page - Sangdest Microelectronic (Nanjing) Co., Ltd |
4 / 6 page SANGDEST MICROELECTRONICS Technical Data Green Products Data Sheet N0246, Rev. - • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • ES3EA Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Characteristic Symbol ES3EA Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 300 V Average Rectified Output Current @TL = 75°C Io 3.0 A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM 100 A Forward Voltage @IF = 3.0A, TJ=25°C VF 1.25 V Peak Reverse Current @TA = 25°C At Rated DC Blocking Voltage @TA = 100°C IRM 5.0 500 µA Typical Thermal Resistance Junction to Lead (Note 1) RθJL 16 K/W Maximum Reverse Recovery Time (Note 2) Trr 35 ns Typical Junction Capacitance (Note 3) CJ 45 pF Operating and Storage Temperature Range TJ, TSTG -65 to +150 °C Case Style SMA Note: 1. Mounted on P.C. Board with 8.0mm 2 lead area 2. Measured with IF=0.5A; IR=1.0A; IRR=0.25A. 3. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC |
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