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FQPF10N60C 데이터시트(PDF) 2 Page - Fairchild Semiconductor |
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FQPF10N60C 데이터시트(HTML) 2 Page - Fairchild Semiconductor |
2 / 10 page Rev. B, October 2003 ©2003 Fairchild Semiconductor Corporation Electrical Characteristics TC = 25°C unless otherwise noted Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 14.2mH, IAS = 9.5 A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 9.5A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 600 -- -- V ∆BV DSS / ∆T J Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.7 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 µA VDS = 480 V, TC = 125°C -- -- 10 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.75 A -- 0.6 0.73 Ω gFS Forward Transconductance VDS = 40 V, ID = 4.75 A (Note 4) -- 8.0 -- S Dynamic Characteristics Ciss Input Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1570 2040 pF Coss Output Capacitance -- 166 215 pF Crss Reverse Transfer Capacitance -- 18 24 pF Switching Characteristics td(on) Turn-On Delay Time VDD = 300 V, ID = 9.5A, RG = 25 Ω (Note 4, 5) -- 23 55 ns tr Turn-On Rise Time -- 69 150 ns td(off) Turn-Off Delay Time -- 144 300 ns tf Turn-Off Fall Time -- 77 165 ns Qg Total Gate Charge VDS = 480 V, ID = 9.5A, VGS = 10 V (Note 4, 5) -- 44 57 nC Qgs Gate-Source Charge -- 6.7 -- nC Qgd Gate-Drain Charge -- 18.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 9.5 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 38 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 9.5 A -- -- 1.4 V trr Reverse Recovery Time VGS = 0 V, IS = 9.5 A, dIF / dt = 100 A/µs (Note 4) -- 420 -- ns Qrr Reverse Recovery Charge -- 4.2 -- µC |
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