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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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BF908-R_2015 데이터시트(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF908-R_2015 데이터시트(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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2 / 9 page  NXP Semiconductors Product specification Dual-gate MOS-FETs BF908; BF908R FEATURES • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz. APPLICATIONS • VHF and UHF applications with 12 V supply voltage, such as television tuners and professional communications equipment. DESCRIPTION Depletion type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The transistors are protected against excessive input voltage surges by integrated back-to-back diodes between gates and source. PINNING CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. PIN SYMBOL DESCRIPTION 1 s, b source 2 d drain 3g2 gate 2 4g1 gate 1 Fig.1 Simplified outline (SOT143) and symbol; BF908. handbook, halfpage s,b d g 1 g 2 43 2 1 Top view BF908 marking code: %M1. MAM039 Fig.2 Simplified outline (SOT143R) and symbol; BF908R. handbook, halfpage s,b d g 1 g 2 MAM040 34 1 2 Top view BF908R marking code: %M2. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VDS drain-source voltage −− 12 V ID drain current −− 40 mA Ptot total power dissipation −− 200 mW Tj operating junction temperature −− 150 °C yfs forward transfer admittance 36 43 50 mS Cig1-s input capacitance at gate 1 2.4 3.1 4 pF Crs reverse transfer capacitance f = 1 MHz 20 30 45 pF F noise figure f = 800 MHz − 1.5 2.5 dB Rev. 03 - 14 November 2007 2 of 9 |
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유사한 설명 - BF908-R_2015 |
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