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BF1203_2015 데이터시트(PDF) 11 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1203_2015 데이터시트(HTML) 11 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
11 / 20 page 2001 Apr 25 11 Philips Semiconductors Product specification Dual N-channel dual gate MOS-FET BF1203 DYNAMIC CHARACTERISTICS AMPLIFIER b Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 12 mA; unless otherwise specified. Notes 1. Calculated from measured s-parameters. 2. Measured in Fig.35 test circuit. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT yfs forward transfer admittance pulsed; Tj =25 °C 253040mS Cig1-ss input capacitance at gate 1 f = 1 MHz − 1.7 2.2 pF Cig2-ss input capacitance at gate 2 f = 1 MHz − 4 − pF Coss output capacitance f = 1 MHz − 0.85 − pF Crss reverse transfer capacitance f = 1 MHz − 15 30 fF F noise figure f = 10.7 MHz; GS = 20 mS; BS =0 − 911 dB f = 400 MHz; YS =YS opt − 0.9 1.5 dB f = 800 MHz; YS =YS opt − 1.1 1.8 dB Gtr power gain f = 200 MHz; GS = 2 mS; BS =BS opt; GL = 0.5 mS; BL =BL opt; note 1 − 34 − dB f = 400 MHz; GS = 2 mS; BS =BS opt; GL = 1 mS; BL =BL opt; note 1 − 30 − dB f = 800 MHz; GS = 3.3 mS; BS =BS opt; GL = 1 mS; BL =BL opt; note 1 − 25 − dB Xmod cross-modulation input level for k = 1%; fw = 50 MHz; funw = 60 MHz; note 2 at 0 dB AGC 90 −− dB µV at 10 dB AGC − 92 − dB µV at 40 dB AGC 100 105 − dB µV |
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