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UPA1478 데이터시트(HTML) 1 Page - NEC

부품명 UPA1478
상세내용  NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE DARLINGTON TRANSISTOR INDUSTRIAL USE
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홈페이지  http://www.nec.com/
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UPA1478 데이터시트(HTML) 1 Page - NEC

   
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SILICON TRANSISTOR ARRAY
DESCRIPTION
The
µPA1478 is NPN silicon epitaxial Darlington
Power Transistor Array that built in Surge Absorber and
4 circuits designed for driving solenoid, relay, lamp and
so on.
FEATURES
Surge Absorber (Zener Diode) built in.
Easy mount by 0.1 inch of terminal interval.
High hFE for Darlington Transistor.
ORDERING INFORMATION
Part Number
Package
Quality Grade
µPA1478H
10 Pin SIP
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
31
±4V
Collector to Emitter Voltage VCEO
31
±4V
Emitter to Base Voltage
VEBO
7V
Surge Sustaining Energy
ECEO (SUS)
40
mJ/unit
Collector Current (DC)
IC(DC)
±2
A/unit
Collector Current (pulse)
IC(pulse)*
±4
A/unit
Total Power Dissipation
PT1
**
3.5
W
Total Power Dissipation
PT2
***
28
W
Junction Temperature
TJ
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
* PW
≤ 300
µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
µPA1478
NPN SILICON POWER TRANSISTOR ARRAY
LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR)
INDUSTRIAL USE
PACKAGE DIMENSION
(in millimeters)
1 2 3 4 5 6 7 8 9 10
26.8 MAX.
1.4
0.6 ±0.1
2.54
4.0
1.4
0.5 ±0.1
CONNECTION DIAGRAM
2
3
1
468
57
9
10
(C)
(E)
(B)
R1
R2
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
: Base (B)
: Collector (C)
: Emitter (E)
R1 = 10 k
R2 = 500
.
.
.
.
The information in this document is subject to change without notice.
©
1994
DATA SHEET
Document No. IC-3566
(O.D. No. IC-6634)
Date Published November 1994 P
Printed in Japan


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