전자부품 데이터시트 검색엔진 |
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LB11920-E 데이터시트(PDF) 2 Page - ON Semiconductor |
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LB11920-E 데이터시트(HTML) 2 Page - ON Semiconductor |
2 / 10 page LB11920 No.7229-2/10 Allowable Operating Conditions at Ta = 25 °C Parameter Symbol Conditions Ratings Unit Supply voltage range 1 VM 9.5 to 30 V Supply voltage range 2 VCC 4.5 to 5.5 V HP pin applied voltage VHP 0 to 32 V HP pin output current IHP 0 to 3 mA Electrical Characteristics at Ta = 25°C, VM = RF = 27V, VCC = 5V Ratings Parameter Symbol Conditions min typ max Unit Supply current 1 IVCC-1 VCC pin 9 13 mA Supply current 2 IVCC-2 VCC pin at stop mode 2.0 3.0 mA Output block Output saturation voltage 1 VO sat1 IO = 1.0A, VO (sink) + VO (source) 1.7 2.4 V Output saturation voltage 2 VO sat2 IO = 2.0A, VO (sink) + VO (source) 2.0 2.9 V Output saturation voltage 3 VO sat3 IO = 3.0A, VO (sink) + VO (source) 2.4 3.5 V Output leakage current IO leak 100 μA Output delay time 1 td1 PWMIN “H” → “L” 1.25 2.5 μs Output delay time 2 td2 PWMIN “L” → “H” 1.8 3.6 μs Lower diode forward 1 VD1-1 ID = -1.0A 1.1 1.5 V Lower diode forward 2 VD1-2 ID = -2.0A 1.3 1.9 V Lower diode forward 3 VD1-3 ID = -3.0A 1.5 2.3 V Upper diode forward 1 VD2-1 ID = 1.0A 1.3 1.7 V Upper diode forward 2 VD2-2 ID = 2.0A 2.0 2.7 V Upper diode forward 3 VD2-3 ID = 3.0A 2.7 3.7 V Hall Amplifier Input bias current IHB -2 -0.1 μA Common-mode input voltage range 1 VICM1 Hall device used 0.5 VCC-2.0 V Common-mode input voltage range 2 VICM2 For input one-side bias (Hall IC application) 0 VCC V Hall input sensitivity at differential input 50 mVp-p Hysteresis width ΔVIN 20 30 50 mV Input voltage low → high VSLH 5 15 25 mV Input voltage high → low VSHL -25 -15 -5 mV PWM oscillator Output H level voltage VOH (PWM) 2.75 3.0 3.25 V Output L level voltage VOL (PWM) 1.0 1.2 1.3 V External C charge current ICHG(PWM) VPWM = 2.1V -60 -45 -30 μA Oscillator frequency f (PWM) C = 1000pF 15.8 20 24.2 kHz Amplitude V (PWM) 1.6 1.8 2.1 Vp-p CSD circuit Operating voltage VOH (CSD) 3.6 3.9 4.2 V External C charge current ICHG (CSD) VCSD = 0V -15 -11 -7 μA Operating time T (CSD) C = 10 μF, Design target value* 3.5 s HP pin Output low level voltage VOL (HP) IHP = 2mA 0.1 0.4 V Output leakage current Ileak(HP) VHP = 30V 10 μA Thermal shutdown operation Thermal shutdown operating temperature TTSD Design target value* (junction temperature) 150 180 °C Hysteresis width ΔTSD Design target value* (junction temperature) 45 °C Current limiter circuit (RF pin) Limiter voltage VRF 0.45 0.5 0.55 V Note : * This parameter is a design target value and is not measured. Continued on next page. |
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