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CA3086M96 데이터시트(PDF) 2 Page - Intersil Corporation |
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CA3086M96 데이터시트(HTML) 2 Page - Intersil Corporation |
2 / 5 page 2 CA3086 Absolute Maximum Ratings Thermal Information The following ratings apply for each transistor in the device: Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . .15V Collector-to-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . .20V Collector-to-Substrate Voltage, VCIO (Note 1) . . . . . . . . . . . . .20V Emitter-to-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . .5V Collector Current, IC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Conditions Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Thermal Resistance (Typical, Note 2) θJA (oC/W) θJC (oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . 110 N/A SOIC Package . . . . . . . . . . . . . . . . . . . 130 N/A Maximum Power Dissipation (Any one transistor) . . . . . . . . .300mW Maximum Junction Temperature (Plastic Package) . . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor in the CA3086 is isolated from the substrate by an integral diode. The substrate (Terminal 13) must be connected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. To avoid undesirable coupling between transistors, the substrate (Terminal 13) should be maintained at either DC or signal (AC) ground. A suitable bypass capacitor can be used to establish a signal ground. 2. θJA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25 oC, For Equipment Design PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector-to-Base Breakdown Voltage V(BR)CBO lC = 10µA, IE = 0 20 60 - V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown Voltage V(BR)ClO IC = 10µA, ICI = 0 20 60 - V Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 7 - V Collector-Cutoff Current (Figure 1) ICBO VCB = 10V, IE = 0, - 0.002 100 nA Collector-Cutoff Current (Figure 2) ICEO VCE = 10V, IB = 0, - (Figure 2) 5 µA DC Forward-Current Transfer Ratio (Figure 3) hFE VCE = 3V, IC = 1mA 40 100 - Electrical Specifications TA = 25 oC, Typical Values Intended Only for Design Guidance PARAMETER SYMBOL TEST CONDITIONS TYPICAL VALUES UNITS DC Forward-Current Transfer Ratio (Figure 3) hFE VCE = 3V IC = 10mA 100 IC = 10µA54 Base-to-Emitter Voltage (Figure 4) VBE VCE = 3V IE = 1 mA 0.715 V IE = 10mA 0.800 V VBE Temperature Coefficient (Figure 5) ∆VBE/∆T VCE = 3V, lC = 1 mA -1.9 mV/oC Collector-to-Emitter Saturation Voltage VCE SAT IB = 1mA, IC = 10mA 0.23 V Noise Figure (Low Frequency) NF f = 1kHz, VCE = 3V, IC = 100µA, RS = 1kΩ 3.25 dB |
유사한 부품 번호 - CA3086M96 |
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유사한 설명 - CA3086M96 |
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