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FSL214R 데이터시트(PDF) 2 Page - Intersil Corporation |
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FSL214R 데이터시트(HTML) 2 Page - Intersil Corporation |
2 / 8 page 4-2 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified FSL214D, FSL214R UNITS Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDS 250 V Drain to Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR 250 V Continuous Drain Current TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D 1.5 A TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I D 1.0 A Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM 4.5 A Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 V Maximum Power Dissipation TC = 25 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 15 W TC = 100 oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P T 6W Derated Above 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.12 W/oC Single Pulsed Avalanche Current, L = 100 µH, (See Test Figure) . . . . . . . . . . . . . . . . . . . . . .IAS 4.5 A Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS 1.5 A Pulsed Source Current (Body Diode). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM 4.5 A Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -55 to 150 oC Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL (Distance >0.063in (1.6mm) from Case, 10s Max) 300 oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operationofthe device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Drain to Source Breakdown Voltage BVDSS ID = 1mA, VGS = 0V 250 - - V Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 1mA TC = -55 oC - - 5.0 V TC = 25 oC 1.5 - 4.0 V TC = 125 oC 0.5 - - V Zero Gate Voltage Drain Current IDSS VDS = 200V, VGS = 0V TC = 25 oC- - 25 µA TC = 125 oC - - 250 µA Gate to Source Leakage Current IGSS VGS = ±20V TC = 25 oC - - 100 nA TC = 125 oC 200 nA Drain to Source On-State Voltage VDS(ON) VGS = 12V, ID = 1.5A 3.62 V On Resistance rDS(ON)12 ID = 1.0A, VGS = 12V TC = 25 oC - 2.0 2.30 Ω TC = 125 oC - - 4.37 Ω Turn-On Delay Time td(ON) VDD = 125V, ID = 1.5A, RL = 83.3Ω, VGS = 12V, RGS = 7.5Ω - - 15 ns Rise Time tr - - 10 ns Turn-Off Delay Time td(OFF) - - 25 ns Fall Time tf - - 15 ns Total Gate Charge Qg(TOT) VGS = 0V to 20V VDD = 125V, ID = 1.5A - - 14 nC Gate Charge at 12V Qg(12) VGS = 0V to 12V - 8.2 9.5 nC Threshold Gate Charge Qg(TH) VGS = 0V to 2V - - 0.6 nC Gate Charge Source Qgs - 1.7 2.1 nC Gate Charge Drain Qgd - 3.9 5.1 nC Plateau Voltage V(PLATEAU) ID = 1.5A, VDS = 15V - 7 - V Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz - 150 - pF Output Capacitance COSS -40- pF Reverse Transfer Capacitance CRSS -6- pF Thermal Resistance Junction to Case R θJC - - 8.3 oC/W Thermal Resistance Junction to Ambient R θJA - - 175 oC/W FSL214D, FSL214R |
유사한 부품 번호 - FSL214R |
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유사한 설명 - FSL214R |
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