FSL23A4R3 datasheet(3/8 Pages) INTERSIL

부품명	FSL23A4R3

상세설명	5A, 250V, 0.480 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

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제조업체	INTERSIL [Intersil Corporation]

홈페이지	http://www.intersil.com/cda/home

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3 / 8 page

3-25

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Forward Voltage

VSD

ISD = 5A

0.6

-

1.8

V

Reverse Recovery Time

trr

ISD = 5A, dISD/dt = 100A/µs

-

400

ns

Electrical Speciﬁcations up to 100K RAD TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

Drain to Source Breakdown Volts

(Note 3)

BVDSS

VGS = 0, ID = 1mA

250

-

V

Gate to Source Threshold Volts

(Note 3)

VGS(TH)

VGS = VDS, ID = 1mA

1.5

4.0

V

Gate to Body Leakage

(Notes 2, 3)

IGSS

VGS = ±20V, VDS = 0V

-

100

nA

Zero-Gate Leakage

(Note 3)

IDSS

VGS = 0, VDS = 200V

-

25

µA

Drain to Source On-State Volts

(Notes 1, 3)

VDS(ON)

VGS = 12V, ID = 5A

-

2.52

V

Drain to Source On Resistance

(Notes 1, 3)

rDS(ON)12

VGS = 12V, ID = 3A

-

0.480

Ω

NOTES:

1. Pulse test, 300

µs Max.

2. Absolute value.

3. In situ Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.

Single Event Effects (SEB, SEGR) (Note 4)

TEST

SYMBOL

ENVIRONMENT (NOTE 5)

APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDS BIAS

(V)

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (

µ)

Single Event Effects Safe Operating

Area

SEESOA

Ni

26

43

-20

250

Br

37

36

-5

250

Br

37

36

-10

200

Br

37

36

-15

125

Br

37

36

-20

50

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO IAS

0

-10

-15

-20

-25

-5

VGS (V)

LET = 37MeV/mg/cm2, RANGE = 36

µ

300

200

100

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

TEMP = 25oC

LET = 26MeV/mg/cm2, RANGE = 43

µ

300

100

10

DRAIN SUPPLY (V)

1000

ILM = 10A

300A

1E-4

1E-5

1E-6

30

100A

30A

1E-7

1E-3

FSL23A4D, FSL23A4R

유사한 부품 번호 - FSL23A4R3

제조업체	부품명	데이터시트	상세설명
Intersil Corporation	FSL23A0D	72Kb / 8P	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999
	FSL23A0D1	72Kb / 8P	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999
	FSL23A0D3	72Kb / 8P	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999
	FSL23A0R	72Kb / 8P	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999
	FSL23A0R1	72Kb / 8P	6A, 200V, 0.350 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs June 1999

More results

유사한 설명 - FSL23A4R3

제조업체	부품명	데이터시트	상세설명
Intersil Corporation	FSJ264D	48Kb / 9P	33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998
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More results

FSL23A4R3 데이터시트(PDF) 3 Page - Intersil Corporation

FSL23A4R3 데이터시트(HTML) 3 Page - Intersil Corporation

유사한 부품 번호 - FSL23A4R3

유사한 설명 - FSL23A4R3

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