FSL9230R1 datasheet(3/8 Pages) INTERSIL

부품명	FSL9230R1

상세설명	3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs

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제조업체	INTERSIL [Intersil Corporation]

홈페이지	http://www.intersil.com/cda/home

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3 / 8 page

3-181

Source to Drain Diode Speciﬁcations

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Forward Voltage

VSD

ISD = 3A

-0.6

-

-1.8

V

Reverse Recovery Time

trr

ISD = 3A, dISD/dt = 100A/µs

-

190

ns

Electrical Speciﬁcations up to 100K RAD TC = 25oC, Unless Otherwise Speciﬁed

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

Drain to Source Breakdown Volts

(Note 3)

BVDSS

VGS = 0, ID = 1mA

-200

-

V

Gate to Source Threshold Volts

(Note 3)

VGS(TH)

VGS = VDS, ID = 1mA

-2.0

-6.0

V

Gate to Body Leakage

(Notes 2, 3)

IGSS

VGS = ±20V, VDS = 0V

-

100

nA

Zero Gate Leakage

(Note 3)

IDSS

VGS = 0, VDS = -160V

-

25

µA

Drain to Source On-State Volts

(Notes 1, 3)

VDS(ON)

VGS = -12V, ID = 3A

-

-4.73

V

Drain to Source On Resistance

(Notes 1, 3)

rDS(ON)12

VGS = -12V, ID = 2A

-

1.50

Ω

NOTES:

1. Pulse test, 300

µs Max.

2. Absolute value.

3. Insitu Gamma bias must be sampled for both VGS = -12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.

Single Event Effects (SEB, SEGR) (Note 4)

TEST

SYMBOL

ENVIRONMENT (NOTE 5)

APPLIED

VGS BIAS

(V)

(NOTE 6)

MAXIMUM

VDS BIAS

(V)

ION

SPECIES

TYPICAL LET

(MeV/mg/cm)

TYPICAL

RANGE (

µ)

Single Event Effects Safe Operating

Area

SEESOA

Ni

26

43

20

-200

Br

37

36

5

-200

Br

37

36

10

-160

Br

37

36

15

-100

Br

37

36

20

-40

NOTES:

4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.

5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.

6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).

Typical Performance Curves Unless Otherwise Speciﬁed

FIGURE 1. SINGLE EVENT EFFECTS SAFE OPERATING AREA

FIGURE 2. DRAIN INDUCTANCE REQUIRED TO LIMIT

GAMMA DOT CURRENT TO IAS

-120

-80

-40

0

010

15

20

25

5

VGS (V)

-160

-200

TEMP = 25oC

FLUENCE = 1E5 IONS/cm2 (TYPICAL)

LET = 37MeV/mg/cm2, RANGE = 36

µ

LET = 26MeV/mg/cm2, RANGE = 43

µ

-300

-100

-10

DRAIN SUPPLY (V)

-1000

ILM = 10A

300A

1E-4

1E-5

1E-6

-30

100A

30A

1E-3

1E-7

FSL9230D, FSL9230R

유사한 부품 번호 - FSL9230R1

제조업체	부품명	데이터시트	상세설명
Intersil Corporation	FSL923A0D	57Kb / 8P	5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999
	FSL923A0D1	57Kb / 8P	5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999
	FSL923A0D3	57Kb / 8P	5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999
	FSL923A0R	57Kb / 8P	5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999
	FSL923A0R1	57Kb / 8P	5A, -200V, 0.670 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs June 1999

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유사한 설명 - FSL9230R1

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More results

FSL9230R1 데이터시트(PDF) 3 Page - Intersil Corporation

FSL9230R1 데이터시트(HTML) 3 Page - Intersil Corporation

유사한 부품 번호 - FSL9230R1

유사한 설명 - FSL9230R1

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